CREE

CGHV96100F2100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMTCree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies. GaNhas superior properties compared to silicon or gallium arsenide, including higherbreakdown voltage, higher saturated electron drift velocity and higher thermalconductivity. GaN HEMTs also offer greater power density and wider bandwidthscompared to GaAs transistors. This IM FET is available in a metal/ceramic flangedpackage for optimal electrical and thermal performance.

Power Splitter/Combiner3 Way-0° 50Ω 1 to 300 MHz

Non fourni(e)

Non fourni(e)

Non fourni(e)

uQFN package, MAX dimensions: 2.25(L) x 1.4(W) x 0.5(H), 10 pins.

Diode Body MicroSMA used by Taiwan Semiconductor

MACOM

Designed for wideband large signal amplifier and oscillator applicationsUp to 400 MHz range, in single-ended configurationN–Channel enhancement mode- Guaranteed 28 volt, 150 MHz performanceOutput power = 15 wattsNarrow band gain = 16 dB (Typ.)Efficiency = 60% (Typ.)- Small– and large–signal characterization- 100% tested for load mismatch at all phase angles with 30:1 VSWR- Excellent thermal stability, ideally suited for Cass A operation- Facilitates manual gain control, ALC and modulation techniques

Silicon Labs

3D Model of Silicon Labs' BGX13S Bluetooth Transceiver. Pads on bottom of IC are extended 0.05mm to allow for footprint alignment in PCB/CAD software.

Non fourni(e)